Title of article :
New method to measure whole-wavelength transmittance of TCO substrates for thin-film silicon solar cells
Author/Authors :
Isshiki، نويسنده , , Masanobu and Sichanugrist، نويسنده , , Porponth and Abe، نويسنده , , Yusuke and Oyama، نويسنده , , Takuji and Odaka، نويسنده , , Hidefumi and Konagai، نويسنده , , Makoto، نويسنده ,
Issue Information :
ماهنامه با شماره پیاپی سال 2014
Pages :
6
From page :
1813
To page :
1818
Abstract :
High transmittance of transparent conductive oxide (TCO) substrates is one of the most important factors for achieving high efficiency in thin-film silicon solar cells. Immersion (IM) method with CH2I2 liquid is widely used for the evaluation of optical properties (transmittance, reflectance and absorption) for TCO substrates with textured surface in order to reduce the scattering at the TCO surface. However, in order to measure transmittance accurately, three problems have been found. (1) CH2I2 liquid itself absorbs the light in short wavelength region. (2) The transmittance around the absorption edge of CH2I2 liquids is very sensitive to its amount. (3) Scattering cannot be suppressed when the scattering surfaces are more than 2 surfaces (for example, TCO on reactive ion etching (RIE) processed glass). To overcome these problems, we proposed a new setup to measure optical properties of TCO substrates by holding the samples inside the integral sphere. As the results, we have confirmed that their absorption in all wavelength could be measured accurately and the transmittance measured by the new method was well consistent with the external quantum efficiency (EQE) of the fabricated cell while the transmittance measured with conventional IM method showed differently. Therefore, this new method could be a useful tool to evaluate TCO substrates for thin-film silicon solar cells.
Keywords :
TCO , Thin-film silicon solar cell , Transmittance , Texture
Journal title :
Current Applied Physics
Serial Year :
2014
Journal title :
Current Applied Physics
Record number :
1792595
Link To Document :
بازگشت