Title of article
Observation of a tunneling magnetoresistance effect in magnetic tunneling junctions with a high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 electrode
Author/Authors
Shikoh، نويسنده , , Eiji and Kanki، نويسنده , , Teruo and Tanaka، نويسنده , , Hidekazu and Shinjo، نويسنده , , Teruya and Shiraishi، نويسنده , , Masashi، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
4
From page
1296
To page
1299
Abstract
A high resistance ferromagnetic oxide Fe2⋅5Mn0⋅5O4 (FMO) property as a novel spin injector was investigated with a structure of a magnetic tunneling junction (MTJ) composed of FMO/Al–O/Ni80Fe20, in order to reduce an impedance mismatch problem on molecular spintronics. A tunneling magnetoresistance (TMR) effect in the MTJs was observed. The maximum TMR ratio observed in the MTJs was approximately 0.85% at room temperature (RT), and the spin-polarization of FMO was estimated to be at least 0.94% at RT.
Keywords
A. Thin films , D. Tunneling , A. Magnetic films and multilayers
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792597
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