Author/Authors :
Roul، نويسنده , , Basanta and Bhat، نويسنده , , Thirumaleshwara N. and Kumar، نويسنده , , Mahesh and Rajpalke، نويسنده , , Mohana K. and Sinha، نويسنده , , Neeraj and Kalghatgi، نويسنده , , A.T. and Krupanidhi، نويسنده , , S.B.، نويسنده ,
Abstract :
The electrical transport properties of InN/GaN heterostructure based Schottky junctions were studied over a wide temperature range of 200–500 K. The barrier height and the ideality factor were calculated from current–voltage ( I – V ) characteristics based on thermionic emission (TE), and found to be temperature dependent. The barrier height was found to increase and the ideality factor to decrease with increasing temperature. The observed temperature dependence of the barrier height indicates that the Schottky barrier height is inhomogeneous in nature at the heterostructure interface. Such inhomogeneous behavior was modeled by assuming the existence of a Gaussian distribution of barrier heights at the heterostructure interface.
