• Title of article

    Electrical transport properties of Ag3Sn compound

  • Author/Authors

    Tian، نويسنده , , Yong and Zhang، نويسنده , , Qi-ming and Li، نويسنده , , Zhi Qing، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    4
  • From page
    1496
  • To page
    1499
  • Abstract
    The temperature behaviors of the electrical resistivity in polycrystalline Ag3Sn bulk samples were investigated experimentally. We found that the temperature dependence of resistivity shows concave function characteristics from 305 down to 26 K, and can be described by a parallel resistor model [H. Wiesmann et al., Phys. Rev. Lett. 38 (1977) 782]. The resistivities of all samples reveal T 2 behavior from 26 down to ∼ 10 K . We compared our data to the existing theories in which the T 2 dependence of resistivity has been proposed. However, we found none of them can describe the experimental data, and the physical mechanism of the T 2 behavior of resistivity at low temperatures is still enigmatical.
  • Keywords
    A. Disordered systems , C. Electronic transport
  • Journal title
    Solid State Communications
  • Serial Year
    2011
  • Journal title
    Solid State Communications
  • Record number

    1792700