• Title of article

    Theoretical investigations on the structural, lattice dynamical and thermodynamic properties of XC (X=Si, Ge, Sn)

  • Author/Authors

    Zhang، نويسنده , , Xudong and Quan، نويسنده , , Shanyu and Ying، نويسنده , , Caihong and Li، نويسنده , , Zhijie، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    5
  • From page
    1545
  • To page
    1549
  • Abstract
    First-principles calculations, which is based on the plane-wave pseudopotential approach to the density functional perturbation theory within the local density approximation, have been performed to investigate the structural, lattice dynamical, and thermodynamic properties of SiC, GeC, and SnC. The results of ground state parameters, phase transition pressure and phonon dispersion are compared and agree well with the experimental and theoretical data in the previous literature. The obtained phonon frequencies at the zone-center are analyzed. We also used the phonon density of states and quasiharmonic approximation to calculate and predict some thermodynamic properties such as entropy, heat capacity, internal energy, and phonon free energy of SiC, GeC, and SnC in B3 phase.
  • Keywords
    D. Lattice dynamics , A. Semiconductors , D. Thermodynamics properties
  • Journal title
    Solid State Communications
  • Serial Year
    2011
  • Journal title
    Solid State Communications
  • Record number

    1792725