Title of article :
Auger process in CdS/ZnS core-shell quantum dots
Author/Authors :
Zgaren، نويسنده , , Ibtissem and Balti، نويسنده , , Jalloul and Jaziri، نويسنده , , Sihem، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2011
Abstract :
Auger processes are investigated for CdS/ZnS core-shell quantum dots. Auger recombination (AR) lifetime and electron relaxation inside the core are computed. Using the effective-mass theory and by solving a three-dimension Schrödinger equation we predict the dependence of Auger relaxation on size of core-shell nanocrystals. We considered in this work different AR processes: the excited electron (EE), excited hole (EH), multiexciton AR type. Likewise, Auger multiexciton recombination rates are predicted for biexciton. Our results show that biexciton AR type is more efficient than the other AR process (excited electron (EE) and excited hole (EH)). We also found that electron Auger relaxation P → S is very efficient in core-shell nanostructures.
Keywords :
A. II–VI Semiconductors , A. Core-shell , D. Auger relaxation , D. Auger recombination
Journal title :
Solid State Communications
Journal title :
Solid State Communications