• Title of article

    Auger process in CdS/ZnS core-shell quantum dots

  • Author/Authors

    Zgaren، نويسنده , , Ibtissem and Balti، نويسنده , , Jalloul and Jaziri، نويسنده , , Sihem، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2011
  • Pages
    6
  • From page
    1743
  • To page
    1748
  • Abstract
    Auger processes are investigated for CdS/ZnS core-shell quantum dots. Auger recombination (AR) lifetime and electron relaxation inside the core are computed. Using the effective-mass theory and by solving a three-dimension Schrödinger equation we predict the dependence of Auger relaxation on size of core-shell nanocrystals. We considered in this work different AR processes: the excited electron (EE), excited hole (EH), multiexciton AR type. Likewise, Auger multiexciton recombination rates are predicted for biexciton. Our results show that biexciton AR type is more efficient than the other AR process (excited electron (EE) and excited hole (EH)). We also found that electron Auger relaxation P → S is very efficient in core-shell nanostructures.
  • Keywords
    A. II–VI Semiconductors , A. Core-shell , D. Auger relaxation , D. Auger recombination
  • Journal title
    Solid State Communications
  • Serial Year
    2011
  • Journal title
    Solid State Communications
  • Record number

    1792789