Title of article
Auger process in CdS/ZnS core-shell quantum dots
Author/Authors
Zgaren، نويسنده , , Ibtissem and Balti، نويسنده , , Jalloul and Jaziri، نويسنده , , Sihem، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2011
Pages
6
From page
1743
To page
1748
Abstract
Auger processes are investigated for CdS/ZnS core-shell quantum dots. Auger recombination (AR) lifetime and electron relaxation inside the core are computed. Using the effective-mass theory and by solving a three-dimension Schrödinger equation we predict the dependence of Auger relaxation on size of core-shell nanocrystals. We considered in this work different AR processes: the excited electron (EE), excited hole (EH), multiexciton AR type. Likewise, Auger multiexciton recombination rates are predicted for biexciton. Our results show that biexciton AR type is more efficient than the other AR process (excited electron (EE) and excited hole (EH)). We also found that electron Auger relaxation P → S is very efficient in core-shell nanostructures.
Keywords
A. II–VI Semiconductors , A. Core-shell , D. Auger relaxation , D. Auger recombination
Journal title
Solid State Communications
Serial Year
2011
Journal title
Solid State Communications
Record number
1792789
Link To Document