Title of article :
Dynamical spin response of electron doped Mott insulators on a triangular lattice
Author/Authors :
Liu، نويسنده , , Bin and Liang، نويسنده , , Ying، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
The spin dynamics of electron doped Mott insulators on a triangular lattice is studied based on the t – J model. It is found that the particularly universal behaviors of integrated dynamical spin structure factor seen in the doped Mott insulators on a square lattice, are absent in the doped Mott insulators on a triangular lattice, indicating the presence of the normal state gap. As a result, the spin–lattice relaxation rate 1 / T 1 divided by T reduces with decreasing temperatures in the temperature region above 0.2 J ≈ 50 K , then follows a Curie–Weiss-like behavior at the temperature less than 50 K, in qualitative agreement with experimental observations.
Keywords :
A. Mott insulator , D. Spin–lattice relaxation , D. Spin dynamics
Journal title :
Solid State Communications
Journal title :
Solid State Communications