• Title of article

    A first-principles study of the effect of oxygen vacancy on rutile Ti1−xCdxO2

  • Author/Authors

    Nayak، نويسنده , , Malaya K. and Ghanty، نويسنده , , Tapan K. and Ghosh، نويسنده , , Swapan K.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    5
  • From page
    142
  • To page
    146
  • Abstract
    A first-principles study has been performed to understand the effect of oxygen vacancy on the electronic properties of cadmium doped rutile TiO2. We observe that Cd incorporation on rutile TiO2 induces Cd p-states on the top of the valence band which is consistent with an earlier result of Zhang et al. (2008) [5]. Furthermore, by creating an oxygen vacancy, some new states are induced, which originate from the Ti 3d electrons at the middle of the band gap and spread up to the conduction band. Therefore, the band gap of the material reduces significantly, making it suitable to act as a better photocatalyst.
  • Keywords
    A. Semiconductors , C. Point defects , D. Electronic band structure
  • Journal title
    Solid State Communications
  • Serial Year
    2012
  • Journal title
    Solid State Communications
  • Record number

    1792939