Title of article
Electrical properties and Raman scattering investigation of Ag doped ZnO thin films
Author/Authors
Li، نويسنده , , W.J. and Kong، نويسنده , , C.Y. and Ruan، نويسنده , , H.B. and Qin، نويسنده , , G.P. and Huang، نويسنده , , G.J. and Yang، نويسنده , , T.Y. and Liang، نويسنده , , W.W. and Zhao، نويسنده , , Y.H. and Meng، نويسنده , , X.D and Yu، نويسنده , , P. and Cui، نويسنده , , Y.T. and Fang، نويسنده , , L.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
147
To page
150
Abstract
Ag-doped ZnO thin films were deposited on quartz glass substrates by a radio-frequency (RF) magnetron sputtering technique at room temperature (RT). The influence of Ag doping content on the electrical and Raman scattering properties of ZnO films were systematically investigated by Hall measurement system and Raman scattering spectrum. Two additional local vibrational modes (LVMs) at 230.0 and 394.5 cm−1 induced by Ag dopant in ZnO:Ag films were observed by Raman analyses at RT, corresponding to Ag atoms located at O sites (LV MZn−Ag) and Zn sites (LV MAg−O) in ZnO lattice. Moreover, we further studied the effect of donor AgO and acceptor AgZn defects on the electrical properties of ZnO:Ag films. The results indicate that O-rich condition is preferred to suppress the formation of AgO defects and enhance AgZn defects. The p-type ZnO:Ag film was achieved by properly optimizing the annealing conditions under O-rich condition.
Keywords
B. Raman scattering spectrum , C. Local vibrational modes (LVMs) , D. p-Type , A. Ag-doped ZnO
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1792941
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