Title of article
Spin-dependent quantum well effect in fully epitaxial Cr/ultrathin Fe/MgO/Fe magnetic tunnel junctions
Author/Authors
Sheng، نويسنده , , P. and Bang، نويسنده , , Do and Nozaki، نويسنده , , T. and Miwa، نويسنده , , S. and Suzuki، نويسنده , , Y.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
273
To page
277
Abstract
The spin-dependent quantum well effect on tunneling conductance was investigated in fully epitaxial Cr/ultrathin Fe/MgO/Fe junctions at room temperature. We found that the quantum well states (QWS) are strongly affected by the growth condition of the ultrathin Fe layer. Large enhancement of the conductance peak height was observed for the sample with post-annealing temperature 200 °C compared with the case of no annealing. The conductance at around zero bias exhibits clear oscillatory behavior depending on the ultrathin Fe thickness.
Keywords
C. Magnetic tunnel junctions , D. Tunnel magnetoresistance , D. Spin-dependent quantum well , D. Dynamic conductance
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1792984
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