Universal scheme for measuring the electron in semiconductors and application to a lightly-doped -GaAs sample

A new technique has been developed for measuring the T 1 spin lifetime of electrons, and should have near universal applicability among III–V semiconductors. The technique has been applied to a lightly doped GaAs sample with n = 3 × 10 14 cm − 3 . Spin decays were measured for fields from 0.5 to 7 T, at temperatures of 1.5 and 5 K. The spin lifetimes were shorter than expected, possibly due to compensation in the sample.