Author/Authors :
Sennikov، نويسنده , , P.G. and Vodopyanov، نويسنده , , A.V. and Golubev، نويسنده , , S.V. and Mansfeld، نويسنده , , D.A. and Drozdov، نويسنده , , M.N. and Drozdov، نويسنده , , Yu.N. and Andreev، نويسنده , , B.A. and Gavrilenko، نويسنده , , L.V. and Pryakhin، نويسنده , , D.A. and Shashkin، نويسنده , , V.I. and Godisov، نويسنده , , O.N. and Glasunov، نويسنده , , A.I. and Safonov، نويسنده , , A.Ju. and Pohl، نويسنده , , H.-J. and Thewalt، نويسنده , , M.L.W. and Becker، نويسنده , , P. and Riemann، نويسنده , , H. and Abrosimov، نويسنده , , N.V. and Valkiers، نويسنده , , S.، نويسنده ,
Abstract :
A new approach for producing high-purity silicon with isotopic enrichment of 28Si isotope is reported. The methods of centrifugal enrichment were modified to obtain the initial gaseous silicon tetrafluoride with a record-breaking enrichment of 0.99999664(11) with respect to 28Si. The effective conversion of silicon tetrafluoride into elementary silicon with minimal isotopic dilution was achieved in an electron cyclotron resonance discharge plasma, sustained by gyrotron microwave radiation with a frequency of 24 GHz. We have experimentally demonstrated the deposition of the layers of microcrystalline 28Si with enrichment of 0.999986 ± 0.000003, which is the best result at the present time.
Keywords :
E. ECR discharge , E. PECVD , B. Isotopic enrichment , A. Silicon isotopes
