Title of article :
Observation of Fermi-energy dependent unitary impurity resonances in a strong topological insulator Bi2Se3 with scanning tunneling spectroscopy
Author/Authors :
Teague، نويسنده , , M.L. and Chu، نويسنده , , H. and Xiu، نويسنده , , F.-X. and He، نويسنده , , L. and Wang، نويسنده , , K.-L. and Yeh، نويسنده , , N.-C.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
5
From page :
747
To page :
751
Abstract :
Scanning tunneling spectroscopic studies of Bi2Se3 epitaxial films on Si (111) substrates reveal highly localized unitary impurity resonances associated with non-magnetic quantum impurities. The strength of the resonances depends on the energy difference between the Fermi level ( E F ) and the Dirac point ( E D ) and diverges as E F approaches E D . The Dirac-cone surface state of the host recovers within ∼2 Å spatial distance from impurities, suggesting robust topological protection of the surface state of topological insulators against high-density impurities that preserve time reversal symmetry.
Keywords :
D. Dirac fermions , D. Impurity resonances , A. Topological insulators , E. Scanning tunneling spectroscopy
Journal title :
Solid State Communications
Serial Year :
2012
Journal title :
Solid State Communications
Record number :
1793195
Link To Document :
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