Title of article :
Electronic structure calculations of substitutional and interstitial hydrogen in Nb
Author/Authors :
Khowash، نويسنده , , Pradeep and Gowtham، نويسنده , , S. and Pandey، نويسنده , , Ravindra، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Pages :
3
From page :
788
To page :
790
Abstract :
We report the results of a theoretical study on the effects of substitutional and interstitial hydrogen atoms in niobium. We confirm that any contaminated hydrogen will occupy the interstitial site over the substitutional site in niobium. For interstitial hydrogens, the lattice deformation increases with the percentage content of hydrogen, though it is negligible at low concentrations. Substitutional hydrogens are found to prefer off-center sites in the host lattice.
Keywords :
C. Electronic structure , D. H defects in Nb , D. Site selectivity
Journal title :
Solid State Communications
Serial Year :
2012
Journal title :
Solid State Communications
Record number :
1793211
Link To Document :
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