Title of article
Nonlinear high-frequency hopping conduction in two-dimensional arrays of Ge-in-Si quantum dots: Acoustic methods
Author/Authors
Drichko، نويسنده , , I.L. and Diakonov، نويسنده , , A.M. and Malysh، نويسنده , , V.A. and Smirnov، نويسنده , , I.Yu. and Koptev، نويسنده , , E.S. and Nikiforov، نويسنده , , A.I and Stepina، نويسنده , , N.P. and Galperin، نويسنده , , Y.M. and Bergli، نويسنده , , J.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
4
From page
860
To page
863
Abstract
Using acoustic methods we have measured nonlinear AC conductance in 2D arrays of Ge-in-Si quantum dots. The combination of experimental results and modeling of AC conductance of a dense lattice of localized states leads us to the conclusion that the main mechanism of AC conduction in hopping systems with large localization length is due to the charge transfer within large clusters, while the main mechanism behind its non-Ohmic behavior is charge heating by absorbed power.
Keywords
D. Ac transport , A. Quantum dots
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1793258
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