Author/Authors :
Shi، نويسنده , , K. and Zhang، نويسنده , , P.F. and Wei، نويسنده , , H.Y. and Jiao، نويسنده , , C.M. and Li، نويسنده , , C.M. and Liu، نويسنده , , X.L. and Yang، نويسنده , , S.Y. and Zhu، نويسنده , , Q.S. and Wang، نويسنده , , Z.G.، نويسنده ,
Abstract :
X-ray photoelectron spectroscopy (XPS) was used to measure the energy discontinuity in the MgO (111)/ZnO (0002) heterostructure. The valence band offset (VBO) was determined to be 1.22±0.23 eV and a type-I heterojunction with a conduction band offset (CBO) of 3.24±0.23 eV was obtained. The discrepancy of VBO values between MgO/ZnO and ZnO/MgO heterojunctions was mainly attributed to the internal electric field induced by spontaneous polarization effect in ZnO layer.
Keywords :
E. Photoelectron spectroscopy , A. ZnO , A. MgO , D. Polarization effect
