Title of article :
First-principles study on the origin of ferromagnetism in n-type Cu-doped ZnO
Author/Authors :
Fang، نويسنده , , D.Q. and De Sarkar، نويسنده , , Abir and Zhang، نويسنده , , R.Q.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
Based on the density functional calculations with the GGA+U correction, we elucidate the origin of the experimentally reported ferromagnetism in n-type Cu-doped ZnO. Pure Cu-doped ZnO shows the unoccupied 3d states in the gap introduced by Cu, resulting in the insulating ground state and weak magnetic exchange interactions, in contrast to the half-metallic ground state and high ferromagnetic stability predicted by the calculations without U correction. However, the electron traps induced by Cu in n-type Cu-doped ZnO may lead to the partial occupancy of the Cu gap states, which stabilize the ferromagnetic ordering between two Cu atoms.
Keywords :
A. Semiconductors , D. Magnetic property , E. First-principles
Journal title :
Solid State Communications
Journal title :
Solid State Communications