Large-area graphene synthesis and its application to interface-engineered field effect transistors

This article reviews recent advances in the large-area synthesis of graphene sheets and the applications of such sheets to graphene-based transistors. Graphene is potentially useful in a wide range of practical applications that could benefit from its exceptional electrical, optical, and mechanical properties. Tremendous effort has been devoted to overcoming several fundamental limitations of graphene, such as a zero band gap and a low direct current conductivity-to-optical conductivity ratio. The intrinsic properties of graphene depend on the synthetic and transfer route, and this dependence has been intensively investigated. Several representative reports describing the application of graphene as a channel and electrode material for use in flexible transparent transistor devices are discussed. A fresh perspective on the optimization of graphene as a 2D framework for crystalline organic semiconductor growth is introduced, and its effects on transistor performance are discussed. This critical review provides insights and a new perspective on the development of high-quality large-area graphene and the optimization of graphene-based transistors.