• Title of article

    Raman study of activated quasi-modes due to misorientation of ZnO nanowires

  • Author/Authors

    Souissi، نويسنده , , A. and Sartel، نويسنده , , C. and Amiri، نويسنده , , G. and Meftah، نويسنده , , A. and Lusson، نويسنده , , A. and Galtier، نويسنده , , P. and Sallet، نويسنده , , V. and Oueslati، نويسنده , , M.، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    5
  • From page
    1729
  • To page
    1733
  • Abstract
    We present Raman scattering study of wurtzite ZnO nanowires deposited by metal–organic chemical vapor deposition (MOCVD) on (0001) sapphire. It is shown that the misorientation of the nanowires, i.e. the inclination with respect to the vertical direction, mixes A1 and E1 Raman modes, giving rise to new modes for which the propagation directions make various angles with the C-axis of ZnO nanowires. Two particular bands depending on the tilt of the nanowires are observed at 400 and 585 cm−1. They are attributed to TO and LO quasi-phonons, and explained using Loudonʹs model. Morphological information of the nanowires was extracted and an average orientation of nanowires is calculated.
  • Keywords
    A. ZnO , B. Chemical vapor deposition , C. Nanowires , E. Raman
  • Journal title
    Solid State Communications
  • Serial Year
    2012
  • Journal title
    Solid State Communications
  • Record number

    1793639