Title of article
Raman study of activated quasi-modes due to misorientation of ZnO nanowires
Author/Authors
Souissi، نويسنده , , A. and Sartel، نويسنده , , C. and Amiri، نويسنده , , G. and Meftah، نويسنده , , A. and Lusson، نويسنده , , A. and Galtier، نويسنده , , P. and Sallet، نويسنده , , V. and Oueslati، نويسنده , , M.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2012
Pages
5
From page
1729
To page
1733
Abstract
We present Raman scattering study of wurtzite ZnO nanowires deposited by metal–organic chemical vapor deposition (MOCVD) on (0001) sapphire. It is shown that the misorientation of the nanowires, i.e. the inclination with respect to the vertical direction, mixes A1 and E1 Raman modes, giving rise to new modes for which the propagation directions make various angles with the C-axis of ZnO nanowires. Two particular bands depending on the tilt of the nanowires are observed at 400 and 585 cm−1. They are attributed to TO and LO quasi-phonons, and explained using Loudonʹs model. Morphological information of the nanowires was extracted and an average orientation of nanowires is calculated.
Keywords
A. ZnO , B. Chemical vapor deposition , C. Nanowires , E. Raman
Journal title
Solid State Communications
Serial Year
2012
Journal title
Solid State Communications
Record number
1793639
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