Title of article :
Crystal structures and band gap characters of h-BN polytypes predicted by the dispersion corrected DFT and GW method
Author/Authors :
Gao، نويسنده , , Shang-Peng، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2012
Abstract :
Geometry optimizations are performed for three polytypes of h-BN using density functional theory with dispersion correction for the van der Walls interaction. Quasiparticle band structure calculations are carried out to solve the controversy on band gap type of h-BN. Band energies are corrected by GW method. The h-BN with Bk structure has an indirect band gap of 5.840 eV. Two kinds of h-BN polytypes are shown to be mechanically stable and have quasi-direct band gap type.
Keywords :
A. Boron nitride , E. DFT , D. Band gap , E. GW method
Journal title :
Solid State Communications
Journal title :
Solid State Communications