• Title of article

    Crystal structures and band gap characters of h-BN polytypes predicted by the dispersion corrected DFT and GW method

  • Author/Authors

    Gao، نويسنده , , Shang-Peng، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2012
  • Pages
    4
  • From page
    1817
  • To page
    1820
  • Abstract
    Geometry optimizations are performed for three polytypes of h-BN using density functional theory with dispersion correction for the van der Walls interaction. Quasiparticle band structure calculations are carried out to solve the controversy on band gap type of h-BN. Band energies are corrected by GW method. The h-BN with Bk structure has an indirect band gap of 5.840 eV. Two kinds of h-BN polytypes are shown to be mechanically stable and have quasi-direct band gap type.
  • Keywords
    A. Boron nitride , E. DFT , D. Band gap , E. GW method
  • Journal title
    Solid State Communications
  • Serial Year
    2012
  • Journal title
    Solid State Communications
  • Record number

    1793675