Title of article
Bonding to antibonding transition for hole ground states in coupled InAs quantum wires
Author/Authors
Wang، نويسنده , , Jiqing and Shang، نويسنده , , Deshuang and Mao، نويسنده , , Huibing and Yu، نويسنده , , Jianguo and Zhao، نويسنده , , Qiang and Yang، نويسنده , , Pingxiong and Xing، نويسنده , , Huaizhong، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
4
From page
41
To page
44
Abstract
We calculate hole energies of the bonding and antibonding states in coupled quantum wires using 6-band kp model. It is shown that hole ground state changes character from a bonding to an antibonding orbital with increasing inter-wire distances. This effect is a consequence of the enhancement of light hole contribution to the ground state. The variations of g factors under external electric and magnetic fields demonstrate the antibonding character of hole ground states.
Keywords
A. InAs , D. Hole , A. Quantum wire , D. g Factor
Journal title
Solid State Communications
Serial Year
2013
Journal title
Solid State Communications
Record number
1793952
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