Fabrication of holey silicon structures with inner radial p–n junction for solar cells

In this work, we have described a fabrication of the holey silicon structures with inner radial p–n junction for solar cells. This holey structure p–n junction offers great advantages in the electrode fabrication associated with their special geometry, and highly improves photocurrent of the solar cells. Furthermore, we have studied the influence of B doping on the p-type Si layer which is the determining component for solar cells junction. Raman characterization was employed to describe the B doping concentration at different B2H6-to-SiH4 flow ratios. It is experimentally found that the open-circuit voltage and power-conversion efficiency of solar cells can be optimized by controlling the B doping concentration in the p-type Si layer.