Title of article
Fluorination effects on the electronic transport properties of dithiophene-tetrathiafulvalene (DT-TTF) molecular junctions
Author/Authors
Li، نويسنده , , Ming-Jun and Long، نويسنده , , Meng-Qiu and Chen، نويسنده , , Ke-Qiu and Xu، نويسنده , , Hui، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2013
Pages
6
From page
62
To page
67
Abstract
The fluorination of dithiophene-tetrathiafulvalent (DT-TTF) was investigated by using the density functional theory combined with nonequilibrium Greenʹs function method. It is demonstrated that fluorination can modify the electronic transport properties of DT-TTF. Negative differential resistance can be observed within a certain bias voltage range in 4FDT-TTF.
Keywords
A. Dithiophene-tetrathiafulvalene , C. Fluorination effect , D. NDR behavior , D. Transport property
Journal title
Solid State Communications
Serial Year
2013
Journal title
Solid State Communications
Record number
1793996
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