Title of article :
A numerical study on subband structure of InxAl1−xN/GaN-based HEMT structures with low-indium (x<0.10) barrier layer
Author/Authors :
Elibol، نويسنده , , K. and Atmaca، نويسنده , , G. and Tasli، نويسنده , , P. and Lisesivdin، نويسنده , , S.B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
The effects of thicknesses and alloy fraction of different layers in a pseudomorphic InAlN/AlN/GaN HEMTs on 2DEG wave functions and carrier densities of subbands were investigated with the help of one-dimensional self-consistent solutions of nonlinear Schrödinger–Poisson equations. Higher carrier densities are obtained at lower indium mole fractions. Also, the effect of second subband is shown within these carrier density values.
Keywords :
A. HEMT , D. Subband , D. 2DEG , A. InAlN/AlN/GaN
Journal title :
Solid State Communications
Journal title :
Solid State Communications
