Effects of doping concentration on the transition energy of InGaN/GaN quantum well diodes

The effects of the doping level and the operating current on the transition energy of InGaN/GaN QW diodes have been studied through the self-consistent solution of the Schrِdinger and Poisson equations. Broad change in the transition energy is observed due to the doping variation. With increase in the current density the emission peak shifts toward higher energy. This shift, which is a major disadvantage of the lighting devices, is reduced significantly by increasing the doping concentration.