Title of article :
Defect formation in chlorine-doped zinc oxide
Author/Authors :
Liu، نويسنده , , Bo and Gu، نويسنده , , Mu and Liu، نويسنده , , Xiaolin and Huang، نويسنده , , Shiming and Ni، نويسنده , , Chen، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2013
Abstract :
First-principles pseudopotential calculations have been performed to investigate the chorine-doped zinc oxide. From the calculated results, it is concluded that the ClO is energetically favorable and easy to form under the O-poor condition. Therefore, Cl-doping is an effective method to eliminate the oxygen vacancy in ZnO during the growth. However, the corresponding energy levels of ClO and Cli in band gap are rather deep so that they cannot play a role of donor or acceptor.
Keywords :
A. Semiconductor , A. ZnO:Cl , D. Defect formation , E. First-principles calculation
Journal title :
Solid State Communications
Journal title :
Solid State Communications