Title of article
On the mechanism of room temperature superconductivity in substitutionally doped graphene
Author/Authors
Sinha، نويسنده , , K.P. and Jindal، نويسنده , , Apoorv، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2014
Pages
2
From page
44
To page
45
Abstract
A combined mechanism involving phononic and electronic processes is suggested for superconductivity in substitutionally doped graphene. The electronic mechanism is similar to the one used for doped fullerene system, MxC60 (M=K, Rb, etc.) and triggered by bond polarization due to doped impurities such as B or Al. It is found that on increasing the doping, the superconducting critical temperature can be raised to room temperature.
tails of the combined model are given along with the predicted values of TC.
Keywords
C. Phonon and bond-polarization mechanism , D. High-temperature superconductivity , B. Boron doping , A. Graphene
Journal title
Solid State Communications
Serial Year
2014
Journal title
Solid State Communications
Record number
1794655
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