High quality GaN nanowires synthesized from Ga2O3 with graphite powder using VPE method

Synthesis of single-crystalline GaN nanowires on C-Al2O3 substrates in a vapor phase epitaxy process by the help of a Ni catalyst was realized. The GaN nanowires were grown at 1000–1100 °C using a mixed powder of Ga2O3 and graphite. GaN nanowires were found to have a single-crystalline hexagonal structure in a high-resolution transmission electron microscopy and X-ray scattering measurements in spite of atmospheric pressure growth. Diameters of the grown nanowires range from 60 to 120 nm, which are comparable to the diameters (10–80 nm) of hydrothermally prepared Ni nanoislands acting as a seed. This fact indicates that the diameter of GaN nanowires can be effectively tuned by controlling that of Ni catalysts.