Author/Authors :
Jo، نويسنده , , Gunho and Hong، نويسنده , , Woong-Ki and Maeng، نويسنده , , Jongsun and Kim، نويسنده , , Tae-Wook and Wang، نويسنده , , Gunuk and Yoon، نويسنده , , Ahnsook and Kwon، نويسنده , , Soon-Shin and Song، نويسنده , , Sunghoon and Lee، نويسنده , , Takhee، نويسنده ,
Abstract :
We synthesized high-quality single-crystalline indium oxide nanowires using gold catalytic vapor–liquid–solid growth and characterized their electrical properties with field effect transistor structures. The grown indium oxide nanowires are non-stoichiometric with In:O composition ratio of 1:1.24 due to oxygen vacancies from X-ray photoelectron spectroscopic study. These oxygen vacancies act as donors in indium oxide nanowires. The field effect transistors based on these nanowires exhibited good transistor characteristics with well-defined linear and saturation regions with on/off ratios as high as 3 × 104 at drain bias 0.1 V, electron carrier density of 3.7 × 1017 cm−3 and an electron mobility of 85 cm2/V s.
Keywords :
indium oxide , Nanowire , Nanoelectronics , field effect transistor
