Nucleation and growth dynamics of diamond films by microwave plasma-enhanced chemical vapor deposition (MPECVD)

Diamond thin films of about 10 μm thickness have been successfully deposited on silicon (001) substrates by means of microwave plasma-enhanced CVD (MPECVD) system. Preliminary results indicate that a two-stage growth method is necessary for high nuclei density and crystal quality. Optimum processing conditions were obtained by orthogonal experiments, which predict that the total pressure is the most significant parameter. Diamond films were characterized morphologically and structurally by scanning electron microscopy, Raman spectroscopy and X-ray diffraction, etc.