Macro-particle free metal plasma immersion ion implantation and/or deposition in a multifunctional configuration

For high-dose metal ion implantation, the use of plasma immersion offers the high-rate advantage, but the simultaneous formation of a surface film along with the sub-surface implanted layer is sometimes a detriment. In this work, we describe a metal plasma immersion approach in which pure and macro-particle free implantation (metal and/or gas ions), pure deposition without ion implantation, or dynamic metal ion beam assisted deposition and gaseous plasma immersion ion implantation (DIBAD metal and gas plasma immersion) can be obtained. We have demonstrated the technique by carrying out Ti and Ta implantation at approximately 80 keV (Ti) and 120 keV (Ta) and doses on the order of 1×1017 ions/cm2. In our experiments, the Ta and Ti plasma immersion process can be tuned to give rise to implantation solely with no concomitant surface film formation. The atomic fraction of the applied dose that deposits as a film vs. the part that is energetically implanted during the DIBAD of metal and gas plasma immersion can be precisely controlled. This is a valuable method to fabricate advanced materials.