TiN coating to three-dimensional materials by PBII using vacuum titanium arc plasma

Titanium ions were implanted in a silicon substrate and titanium nitride films were simultaneously coated on the substrate and by plasma based ion implantation using a titanium vacuum arc. The applied pulse voltage forms the implantation layer of the titanium and nitrogen ions all over the walls of the three-dimensional material of a simple shape. The variation in thickness of the implantation layer with position is small compared to that of the deposition layer. For the trench, the thickness of the implantion layer is in the range of 8–20 nm, whereas the thickness of the deposition layer differs by the factor of 10 between the walls. The plasma density decreases with increasing distance from the arc source due to a divergent flow of titanium ions.