• Title of article

    Up-conversion luminescence from neodymium ion implantation silicon

  • Author/Authors

    Xiao، نويسنده , , Zhisong and Cheng، نويسنده , , Guoan and Zhang، نويسنده , , Tonghe and Xu، نويسنده , , Fei، نويسنده ,

  • Issue Information
    روزنامه با شماره پیاپی سال 2000
  • Pages
    4
  • From page
    461
  • To page
    464
  • Abstract
    Strong ultra-violet and visible frequency up-conversion fluorescence spectroscopy in neodymium-ion implantation single crystalline silicon at the excitation wavelengths of 625, 650, 675 and 700 nm, was experimentally investigated. The PL intensity increased with the increase in the excitation wavelength and ion fluence. The photoluminescence excitation (PLE) spectrum in the wavelength range of 500–770 nm was also studied. For 700-nm pumping, a mechanism of two-photon absorption and radiation transition process was proposed.
  • Keywords
    Up-conversion , Photoluminescence , rare-earth , Ion implantation
  • Journal title
    Surface and Coatings Technology
  • Serial Year
    2000
  • Journal title
    Surface and Coatings Technology
  • Record number

    1799656