Title of article
Up-conversion luminescence from neodymium ion implantation silicon
Author/Authors
Xiao، نويسنده , , Zhisong and Cheng، نويسنده , , Guoan and Zhang، نويسنده , , Tonghe and Xu، نويسنده , , Fei، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
4
From page
461
To page
464
Abstract
Strong ultra-violet and visible frequency up-conversion fluorescence spectroscopy in neodymium-ion implantation single crystalline silicon at the excitation wavelengths of 625, 650, 675 and 700 nm, was experimentally investigated. The PL intensity increased with the increase in the excitation wavelength and ion fluence. The photoluminescence excitation (PLE) spectrum in the wavelength range of 500–770 nm was also studied. For 700-nm pumping, a mechanism of two-photon absorption and radiation transition process was proposed.
Keywords
Up-conversion , Photoluminescence , rare-earth , Ion implantation
Journal title
Surface and Coatings Technology
Serial Year
2000
Journal title
Surface and Coatings Technology
Record number
1799656
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