Title of article
A theoretical analysis of quantum well intermixing using the pulsed laser irradiation technique in InGaAs/InGaAsP laser structure
Author/Authors
Gunawan، نويسنده , , O. and Ong، نويسنده , , T.K. and Chen، نويسنده , , Y.W. and Ooi، نويسنده , , B.S. and Lam، نويسنده , , Y.L. and Zhou، نويسنده , , Y. and Chan، نويسنده , , Y.C.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2000
Pages
6
From page
116
To page
121
Abstract
Pulsed laser irradiation is one of the promising techniques in quantum well intermixing. Here, we report the development of a theoretical model to characterize the process with respect to various parameters. The model estimates the maximum bandgap shift and the effect of process parameters such as exposure time and irradiation energy. The calculation results appear to be in good agreement with the experimental results. The experimental data were obtained from a set of InGaAs/InGaAsP quantum well laser structures using a Q-switched Nd:YAG laser emitting at 1.064 μm. The model serves as a good simulation program to optimize this process for the fabrication of photonic integrated circuits.
Keywords
Photonics integration , Quantum well intermixing , InGaAs/InGaAsP , Pulsed-photoabsorption technique
Journal title
Surface and Coatings Technology
Serial Year
2000
Journal title
Surface and Coatings Technology
Record number
1799705
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