Synthesis of aluminum nitride films by activated reactive ion plating with a cathodic arc source

A new type of method, which synthesized aluminum nitride (AlN) films by activated reactive ion plating with a cathodic arc source, was introduced. Using aluminum and nitrogen gas as source materials, the aluminum nitride films were deposited on Si(100), Mo and stainless steel substrates, and the deposition rate was varied from 4.7 to 20.2 nm/s. The structure and morphology of the synthesized films were evaluated using X-ray diffraction (XRD), scanning electron microscopy (SEM) and infrared reflection absorption spectroscopy (IRAS). The morphology of the films was cauliflower. A transition zone was detected between the film and the substrate.