High current metal-ion implantation to fabricate metal silicides

Using a metal vapor vacuum arc (MEVVA) ion source, metallic silicides, such as C54-TiSi2, NiSi2, COSi2, NbSi2 and TaSi2, etc., with good electrical properties were obtained directly on Si wafers by high current metal-ion implantation with neither in situ heating nor post-annealing. Semiconducting silicides, such as β-FeSi2 and CrSi2, were also directly formed on Si wafers by MEVVA ion implantation with unique physical properties. The growth mechanism of the metal silicides is also discussed for Ni–Si as a representative system.