Low temperature growth of rutile TiO2 films in modified rf magnetron sputtering

Low temperature (≤300°C) growth of rutile TiO2 films with high refractive index which is equal to bulk TiO2 crystal was achieved by using a modified sputtering method. Depositions were carried out in rf magnetron sputtering apparatus equipped with an auxiliary permanent magnet just under the grounded electrode. The as-deposited films showed rutile polycrystalline structure and fine surface morphology indicating higher densification. Remarkable changes in composition, total current and energy of incident ions were presented at a Ar–O2 total pressure of 2.7 Pa. The rutile phase grows in a modified sputtering method in contrast with anatase phase growth in conventional sputtering apparatus.