Title of article
Ion current analysis in pulsed RF plasma as a fundamental research of plasma-based ion implantation
Author/Authors
Tenno، نويسنده , , N and Yukimura، نويسنده , , K and Masamune، نويسنده , , S، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
5
From page
127
To page
131
Abstract
Analysis of the target current in plasma-based ion implantation (PBII) has been performed using a simple equivalent circuit model. It was found that a current for charging the stray capacitance dominates the initial phase of the voltage pulse. The target voltage decay after turning off the power supply depends on the sheath impedance and the stray capacitance as well. It is therefore very important to reduce the stray capacitance in order to suppress unfavorable effects, such as sputtering with low energy ions.
Keywords
Plasma-based ion implantation (PBII) , Ion current analysis , Stray capacitance
Journal title
Surface and Coatings Technology
Serial Year
2001
Journal title
Surface and Coatings Technology
Record number
1800646
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