TiN coating and ion implantation of materials with three-dimensional topology in metal DC plasma-based ion implantation

Titanium ions were implanted into silicon substrates which adhered to the material of three-dimensional shapes, such as trench and sphere, and the titanium nitride films were deposited on the substrate by plasma-based ion implantation using a titanium vacuum arc in nitrogen gas. The pulse voltage applied formed a nearly uniform implanted layer of titanium and nitrogen ions all over the surface of the materials of three-dimensional shape. The variation in thickness of the implanted layer with position was small compared to that of the deposited layer. For the parallel trench with a width of 16 mm, the maximum ratio of the thickness of the implanted layer was 2.5, whereas that of the deposited layer amounted to 10. For the perpendicular trench, the thickness of the deposited and implanted layers on the inner sidewall and bottom of the trench were not as small as those of the back and inner sidewall for the parallel trench. The thickness of the deposited and implanted layers on the central partition of the double trench was not influenced by the existence of side partitions.