Combined deposition and implantation in the cathodic arc for thick film preparation

Delamination is a major mode of failure for many thin films. A film may delaminate spontaneously if the strain energy released exceeds the adhesion energy per unit area. In this work we explore the use of pulsed ion bombardments with energies up to 20 keV. At this energy, which is much higher than that normally used in ion-assisted deposition, implantation into the underlying substrate will occur. The process may have beneficial effects on the film adhesion. We report that we have successfully prepared carbon films in excess of 4.5 μm in thickness on silicon substrates. The thick films demonstrate indentation properties similar to bulk glassy carbon. In addition, we have been able to modify the stoichiometry of films by using a combination of implantation and deposition.