Title of article
Determination of heat and ion fluxes in plasma immersion ion implantation by in situ measurement of temperature using laser interferometry
Author/Authors
Takaki، نويسنده , , K and Koseki، نويسنده , , D and Fujiwara، نويسنده , , T، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2001
Pages
4
From page
261
To page
264
Abstract
Temperature rises of a birefringent substrate (LiNbO3) with repetitive negative pulse bias have been measured in a capacitively coupled RF argon plasma. The measurement method is based on monitoring the variation in natural birefringence due to the changed temperature by interferometry. Using this method, the dependence of the substrate temperature rise upon the repetition rate of the pulse bias has been investigated. A negative bias of −800 V was applied in a series of pulses with repetition rates of 400–800 Hz and a duration of 35 μs using a pulse modulator. The heat flux increases with the repetition rate of the bias pulse. At 800 Hz the value is nearly equal to 40% of the power applied to the pulse modulator.
Keywords
heat flux , Temperature , Plasma immersion ion implantation , Laser interferometry , Birefringence , RF plasma
Journal title
Surface and Coatings Technology
Serial Year
2001
Journal title
Surface and Coatings Technology
Record number
1800736
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