A unique ECR broad beam source for thin film processing

We present the special microwave excited ECR (electron cyclotron resonance) type broad beam ion source EC/A 125 together with first results in ion beam deposition. Our source concept overcomes different disadvantages of common broad beam ion sources. By means of a modular source design and an autotuning microwave power supply, an adaptation at different process requirements is possible. The efficiency of the source is demonstrated analysing the performance in inert and reactive environment. We analyse and discuss the resulting beam composition and draw important conclusions on the plasma-chemical processes occurring in the source from the measurement of the ion energy distributions. The source is operated at the CYBERITE ion beam equipment and results in deposition of magneto-resistive films and multilayer films are illustrated.