Title of article :
Production of low electron temperature ECR plasma for thin film deposition
Author/Authors :
Itagaki، نويسنده , , Naho and Ueda، نويسنده , , Yoko and Ishii، نويسنده , , Nobuo and Kawai، نويسنده , , Yoshinobu، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2001
Abstract :
An electron cyclotron resonance (ECR) plasma with low electron temperature parallel to the magnetic field was produced by applying the mirror magnetic field for Ar, Ar/N2 and H2 gasses. It was found that the temperature parallel to the magnetic field was lower than the temperature perpendicular to the field by 5∼50% and decreased at the ‘throat’ of the mirror magnetic field. Especially, the electron temperature parallel to the magnetic field was observed to be less than 2 eV in the Ar/N2 and the H2 plasma. Our experimental results suggested that the high-quality thin films could be prepared by setting the substrate perpendicular to the field lines at the ‘throat’ of mirror magnetic field because of the decrease in ion bombardment to the substrate.
Keywords :
Electron cyclotron resonance plasma , Low-electron-temperature plasma , Ion bombardment energy , Plasma CVD
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology