Room temperature synthesis of SiO2 thin films by ion beam induced and plasma enhanced CVD

Compact and dense thin films of SiO2 have been prepared at room temperature by ion beam induced CVD (IBICVD). By this procedure accelerated O2+ species interact with the surface of the substrate provoking the decomposition of the Si(CH3)Cl precursor and the formation of the film. The films have been characterized by AFM, FT-IR, RBS and TEM. Their refractive indexes have been determined by spectroscopic ellipsometry. Layers with higher roughness and porosity can be prepared by using plasma enhanced CVD of the same volatile precursor with a microwave ECR plasma source. In this case the addition of Ar to the plasma gas produces an increase in porosity. All the data confirm the previous microstructural characteristics of the films.