Title of article
Ion beam synthesis of α-CNx:H films
Author/Authors
Kopustinskas، نويسنده , , V. and Me?kinis، نويسنده , , ?. and Grigali?nas، نويسنده , , V. and Tamulevi?ius، نويسنده , , S. and Puc?ta، نويسنده , , M. and Niaura، نويسنده , , G. and Toma?i?nas، نويسنده , , R.، نويسنده ,
Issue Information
روزنامه با شماره پیاپی سال 2002
Pages
4
From page
180
To page
183
Abstract
Hydrogenated amorphous carbon nitride (α-CNx:H) films (100–200 nm) were grown by direct ion beam deposition on Si(100) substrates. Ion beams have been produced by electrostatic ion sources from C6H14+H2+N2 gas mixtures. The influence of N2/C6H14+H2+N2 gas ratio (N2 concentration) on structure and properties of α-CNx:H films was investigated. The increase of N2 concentration in the gas mixture resulted in decrease of sp3 bonding and formation of the more graphite-like α-CNx:H films. Growth rate and refractive index of formed α-CNx:H films decreased with increasing N2 concentration. A slight decrease of wear resistance (<20%) of the formed films with higher nitrogen ratio was also observed.
Keywords
Ion beam deposition , Raman spectra , Refractive index , Wear resistance , Hydrogenated amorphous carbon nitride films
Journal title
Surface and Coatings Technology
Serial Year
2002
Journal title
Surface and Coatings Technology
Record number
1803281
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