Title of article :
Lateral homogeneity variation in metal plasma immersion ion implantation and deposition
Author/Authors :
Huber، نويسنده , , P. and Manova، نويسنده , , D. and Mنndl، نويسنده , , S. and Rauschenbach، نويسنده , , B.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Abstract :
Using a cathodic arc, with a shield to reduce the droplet rate, it is possible to obtain homogeneous AlN films across substrates with diameters up to 10 cm by metal plasma immersion ion implantation and deposition (MePIIID). The film thickness varies by less than 5%, as measured by spectroscopic ellipsometry. For a sample with a diameter of 10 cm no major influence of the voltage on the thickness homogeneity was observed. However, for a sample with a diameter of 6 cm and the same deposition conditions the thickness at the edge decreased by more than 33 and 50% for pulse voltages of 5 and 10 kV, respectively. Thus, the geometry of the shield and the sample holder can have a strong influence on the direction of the plasma stream emanating from the cathodic arc. Additionally, the working pressure and plasma composition plays a major role in determining the homogeneity, as was observed using Al and Ti cathodes without background gas or with nitrogen.
Keywords :
Rutherford backscattering spectroscopy , spectroscopic ellipsometry , ALN , homogeneity , Metal plasma immersion ion implantation and deposition
Journal title :
Surface and Coatings Technology
Journal title :
Surface and Coatings Technology