Title of article :
X-Ray photoelectron spectroscopy study of CdTe oxide films grown by rf sputtering with an Ar–NH3 plasma
Author/Authors :
Bartolo-Pérez، نويسنده , , P. and Castro-Rodr??guez، نويسنده , , R. and Caballero-Briones، نويسنده , , F. and Cauich، نويسنده , , W. and Pe?a، نويسنده , , J.L. and Farias، نويسنده , , M.H.، نويسنده ,
Issue Information :
روزنامه با شماره پیاپی سال 2002
Pages :
5
From page :
16
To page :
20
Abstract :
CdTe oxide films were prepared on glass substrates using the rf-sputtering technique and a controlled plasma of Ar–NH3. Films were studied by X-ray photoelectron spectroscopy and X-ray diffraction. The changes in chemical composition as a function of NH3 partial pressure during deposition indicate that oxygen incorporates in the films up to approximately 62 at.%, while the Cd and Te contents decrease from ∼43 to 19 at.%. At NH3 partial pressure of 1.3×10−2 Pa, the Te–Cd bonds are strongly reduced and the Te in the films is mainly bonded to oxygen. The Cd MNN X-ray Auger feature shows a shift in energy of approximately 0.8 eV as a function of NH3 partial pressure. This shift appears to be related to the change in Cd bonding from Cd–Te to Cd–O. Films prepared at NH3 partial pressure of 4×10−4 Pa present crystallinity with a [111] cubic CdTe orientation, while those prepared at higher NH3 partial pressure show an amorphous structure. The amorphous material formed at NH3 partial pressure saturation appears to be mainly amorphous CdTeO3.
Keywords :
CdTe oxide , Ammonia , X-ray photoelectron spectroscopy and X-ray diffraction analysis , Sputtering deposition
Journal title :
Surface and Coatings Technology
Serial Year :
2002
Journal title :
Surface and Coatings Technology
Record number :
1803704
Link To Document :
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