Processing considerations with plasma immersion ion implantation

Plasma immersion ion implantation (PIII) was originally conceived as a method for high-flux implantation and with the capability of conformally implanting non-planar surfaces. Research in the last 15 years has revealed other characteristics which are dissimilar with beamline implantation: multiple species implant; energy and angular distribution spread; plasma/surface interaction; substrate self-heating; and dielectric substrate charging. This paper will address the effect of sheath characteristics, conformality of implant, multiple species implant, ion-neutral scattering and bias schemes on designing the processing recipes.