High temperature plasma based ionic implantation of titanium alloys and silicon

Plasma based ionic implantation (PBII) of refractory materials is an alternative technique to conventional beam line implantation which appears to be very promising in the field of aeronautics, biomaterials and semiconductor electronics. In order to monitor sample temperature independently of the plasma discharge and of the pulsed high voltage conditions, we have developed a new thermally assisted PBII set-up. The thermally assisted plasma immersion implantation reactor (TAPIIR) which enables plasma implantation in the 0.5–60 keV range at controlled temperature between 200 and 1000 °C. Thermochemical treatments like nitriding of titanium and silicon were studied with a separated control of implantation and diffusion parameters. This paper describes implantations made in TAPIIR at elevated temperatures (500–900 °C) on titanium. The new results are presented and discussed by considering transport mechanisms during implantation at high temperature.