High-flux, low-energy implantation effects on the composition of altered layers

A simplified model to study high-flux, low-energy ion irradiation of materials is presented, enabling us to establish links between processing parameters, such as the ion energy, ion flux and fluence of irradiation, and the concentration of incident ions accommodated in the altered layer. The altered layer is considered as a ‘black box’ with input and output parameters, such as sputtering rate, flux and fluence of incident atoms and supply rate of atoms from the bulk due to continuous movement of boundaries of the altered layer. Analysis of the rate equations is carried out and the role of the sputtering and flux effects on the kinetics of accommodation of incident atoms is studied. The concentration of incidents as irradiation proceeds increases and saturates at a level defined by the balance between supply and sputtering rates. At steady state, the incorporation of incident atoms does not change the ratio of surface concentrations for matrix atoms.